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... Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic...
... Bulk Part Status Obsolete Transistor Type PNP Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max) 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic... more
Brand Name:Original
Model Number:2SA1837/2SC4793
Place of Origin:US
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...PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Current - Collector...
...PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock • Load Formed for Surface Mount Application (No Suffix) • Straight Lead (I-PAK: “-I” Suffix) • Electrically Similar to Popular MJE45H • Fast Switching Speeds • Low Collector Emitter Saturation Voltage Transistor Type PNP Current - Collector (Ic) (Max) 8A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Current - Collector... more
Brand Name:Fairchild
Model Number:MJD45H11
Place of Origin:/
NPN PNP Transistors MJD45H11 Fairchild TO-252 New and Original in stock
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...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector...
...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector... more
Brand Name:RENESAS
Model Number:2SD1899
Place of Origin:JAPAN
2SD1899 NPN PNP Transistors Silicon Material Low Collector Saturation Voltage
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...PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10nA DC Current...
...PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Transistor Type PNP Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 10nA DC Current... more
Brand Name:Fairchild Semiconductor
Model Number:PN4258
Place of Origin:CHINA
PN4258 PNP Transistor Integrated Circuit IC Chip 12V 200mA 700MHz 350mW Through Hole TO92-3
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GENERAL PURPOSE APPLICATION. FEATURES ·High Current. (Max. : -1.5A) ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage ...
GENERAL PURPOSE APPLICATION. FEATURES ·High Current. (Max. : -1.5A) ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage ... more
Brand Name:KEC
Model Number:BD140
Place of Origin:Original
BD140 3 Pin Transistor EPITAXIAL PLANAR PNP TRANSISTOR
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...-323 ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V
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...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector...
...PNP Transistors Silicon NPN PowerTransistor DESCRIPTION ·Low collector saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High transition frequency applications Specifications Category: BJT - General Purpose Manufacturer: RENESAS TECHNOLOGY Collector Current (DC) : 3(A) Collector-Base Voltage: 60(V) Collector... more
Brand Name:RENESAS
Model Number:2SD1899
Place of Origin:JAPAN
2SD1899 NPN PNP Transistors Silicon Material Low Collector Saturation Voltage
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... Ideal for Low Power Amplification and Switching MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V
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...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector...
...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector... more
Brand Name:OTOMO
Model Number:2N5401
Place of Origin:ShenZhen China
SGS Silicon Power Transistor High Power PNP Transistor For Electronic Components
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...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector...
...Transistors 2N5401 TRANSISTOR (PNP) FEATURE Ÿ Switching and Amplification in High Voltage Ÿ Applications such as Telephony Ÿ Low Current Ÿ High Voltage ORDERING INFORMATION Part Number Package Packing Method Pack Quantity 2N5401 TO-92 Bulk 1000pcs/Bag 2N5401-TA TO-92 Tape 2000pcs/Box MAXIMUM RATINGS (Ta =25 Š unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -160 V VCEO Collector... more
Brand Name:Hua Xuan Yang
Model Number:2N5401
Place of Origin:ShenZhen China
2N5401 High Power PNP Transistor VCBO -160V For Electronic Components
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... for automatic insertion For Switching and AF Amplifier Applications Our goods: Active components (IC integrated circuits, memory chips, diodes, transistors, etc.) Passive components (capacitors, resistors,
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...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors...
...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors... more
Brand Name:STMicroelectronics
Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P
Place of Origin:CHINA
TIP122 TIP127 TIP142P NPN PNP Transistor Bipolar Discrete Semiconductors
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...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP
...PNP transistors Bipolar Discrete Semiconductor Products Complementary power transistors Description: The devices are manufactured in planar technology with “base island” layout. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP more
Brand Name:STMicroelectronics
Model Number:TIP35C TIP41C TIP42C TIP122 TIP127 TIP142P
Minimum Order Quantity:1 piece
Bipolar Discrete Semiconductor Devices TIP122 TIP127 TIP142P NPN PNP Transistor
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TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to ...
TK5A90E,S4X switching voltage regulators 4.5A 900V 3.1Ohms N-Channel Mosfet Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS technology with a planar process to ... more
Brand Name:TOSHIBA
Model Number:TK5A90E,S4X
Place of Origin:Original
TK5A90E,S4X NPN PNP Transistors 4.5A 900V 3.1Ohms N Channel Mosfet
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...PNP Transistor Texas Instruments/TI TPS56428RHLR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 53 pct. Popularity Medium MSL Level 2 (1 Year) Mounting Style SMD Temperature Range - Operating -40°C ~ 85°C Synchronous Rectifier Yes Frequency - Switching 650kHz Current...
...PNP Transistor Texas Instruments/TI TPS56428RHLR ECAD Module Build or Request PCB Footprint or Symbol Supply and Demand Status Balance Fake Threat In the Open Market 53 pct. Popularity Medium MSL Level 2 (1 Year) Mounting Style SMD Temperature Range - Operating -40°C ~ 85°C Synchronous Rectifier Yes Frequency - Switching 650kHz Current... more
Brand Name:Texas Instruments
Model Number:TPS56428RHLR
Place of Origin:N/S
Surface Mount TI NPN And PNP Transistor Step Down TPS56428RHLR
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...Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.5 V Maximum DC Collector Current...
...Transistor PNP 230 V 15 A 30MHz 150 W Through Hole Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.5 V Maximum DC Collector Current... more
Brand Name:Toshiba
Model Number:2SA1943-O(Q)
Place of Origin:JP
2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
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...Transistors PNP Single Through Hole original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package/Case: TO-18-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 60 V Collector- Base Voltage VCBO: - 60 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 400 mV Maximum DC Collector Current...
...Transistors PNP Single Through Hole original Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package/Case: TO-18-3 Transistor Polarity: PNP Configuration: Single Collector- Emitter Voltage VCEO Max: - 60 V Collector- Base Voltage VCBO: - 60 V Emitter- Base Voltage VEBO: - 5 V Collector-Emitter Saturation Voltage: - 400 mV Maximum DC Collector Current... more
Brand Name:original
Model Number:JAN2N2907A
Place of Origin:original
JAN2N2907A PNP Bipolar Transistor
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...TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current...
...TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current... more
Brand Name:original
Model Number:PBSS4160T,215
Place of Origin:Original Manufacturer
NPN Low Vcesat Mosfet Power Transistor PNP complement PBSS4160T
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ZX5T1951GTA Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • ...
ZX5T1951GTA Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3 Features • BVCEO > -60V • IC = -6A Continuous Collector Current • Low Saturation Voltage VCE(sat) < -95mV max @ -1A • RCE(sat) = 40mΩ for a low Equivalent On-Resistance • ... more
Brand Name:Diodes Incorporated
Model Number:ZX5T1951GTA
Place of Origin:USA
ZX5T1951GTA Bipolar (BJT) Transistor PNP 60 V 6 A 120MHz 1.6 W SOT-223-3
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...Transistors PNP 45V 500mA SOT-23 Manufacturer Part Number: LBC807-16LT1G Rohs Code: Yes Part Life Cycle Code: Contact Manufacturer Package Description: SMALL OUTLINE, R-PDSO-G3 Reach Compliance Code: unknown ECCN Code: EAR99 Manufacturer: LRC Leshan Radio Co Ltd Risk Rank: 5.77 Collector Current-Max (IC): 0.5 A Collector-Emitter Voltage-Max: 45 V Configuration: SINGLE DC Current...
...Transistors PNP 45V 500mA SOT-23 Manufacturer Part Number: LBC807-16LT1G Rohs Code: Yes Part Life Cycle Code: Contact Manufacturer Package Description: SMALL OUTLINE, R-PDSO-G3 Reach Compliance Code: unknown ECCN Code: EAR99 Manufacturer: LRC Leshan Radio Co Ltd Risk Rank: 5.77 Collector Current-Max (IC): 0.5 A Collector-Emitter Voltage-Max: 45 V Configuration: SINGLE DC Current... more
Brand Name:LRC
Model Number:LBC807-16LT1G
Place of Origin:CHINA
LBC807-16LT1G LRC Electronic Diodes And Transistors PNP 45V 500mA SOT-23