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...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...
...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... more
Brand Name:Infineon
Model Number:IRF640NPBF
Place of Origin:Original Factory
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... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in
... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in more
Brand Name:HT
Model Number:F16N65L TO-220F-3L
Place of Origin:China
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Brand Name:VBE
Model Number:VBE36015E2
Place of Origin:CHINA
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...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET
...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET more
Brand Name:original
Model Number:IRFR1018EPBF
Place of Origin:original
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... solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications:
... solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications: more
Brand Name:MOT
Model Number:MRF141G
Place of Origin:PHILIPPINE
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N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ...
N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply LED driving power Features Low On Resistance Low Gate Charge Peak Current vs Pulse Width Curve RoHS ... more
Brand Name:Huixin
Model Number:H10N65
Place of Origin:China
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... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a
... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a more
Brand Name:Infineon Technologies/International Rectifier IOR
Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF
Minimum Order Quantity:1 piece
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...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power...
...MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power density and minimized conduction losses. Features Of IPL60R225CFD7AUMA1 Highest efficiency with outstanding ease-of-use 1 performance tradeoff Enabling increased power... more
Brand Name:Original Factory
Model Number:IPL60R225CFD7AUMA1
Place of Origin:China
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... a floating drive circuit for High-side MOSFET drive. ※SMZ = Soft-switched Multi-resonant Zero Current switch All switching periods work with soft switching operation. The IC is in SOP18 package, and suitable for high performance power supply system with
... a floating drive circuit for High-side MOSFET drive. ※SMZ = Soft-switched Multi-resonant Zero Current switch All switching periods work with soft switching operation. The IC is in SOP18 package, and suitable for high performance power supply system with more
Brand Name:SANKEN
Model Number:SSC9522S
Place of Origin:Japan
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High Power Led heat sink Customized Aluminum Zipper Fin Heatsink With Heat pipe Heatsink for transistor Short details: Product type: heatsink Surface treatment: Silver Anodize Warranty(year): 2 years. Process: Extrusion IP rating IP65 Cetification:CS, GS, ROHS place of original: Guangdong (China) Application: LED Heatsink , for transistor...
High Power Led heat sink Customized Aluminum Zipper Fin Heatsink With Heat pipe Heatsink for transistor Short details: Product type: heatsink Surface treatment: Silver Anodize Warranty(year): 2 years. Process: Extrusion IP rating IP65 Cetification:CS, GS, ROHS place of original: Guangdong (China) Application: LED Heatsink , for transistor... more
Brand Name:Lifong
Model Number:LF-HC-CD1012
Place of Origin:China
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... strap for easy carrying AUDIO-Specification Model: UM3001 (Basic) Main Material: ABS Product Dimension: Ø230 x L350mm Power: Max 50W Power Supply: 8x C(or
... strap for easy carrying AUDIO-Specification Model: UM3001 (Basic) Main Material: ABS Product Dimension: Ø230 x L350mm Power: Max 50W Power Supply: 8x C(or more
Brand Name:UM AUDIO
Model Number:UM3001
Place of Origin:China
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...High Power Circulator Low insertion loss 780-1080 nm High Power Optical Circulator for Fiber Amplifier High Power Optical Circulator GEZHI high power optical circulator is designed for high power applications. It features small size, bandwidth, stable performance, wide temperaturerange,high isolation, low loss, low standing wave,high The characteristics of intermodulation and high power Features & Applications of High Power
...High Power Circulator Low insertion loss 780-1080 nm High Power Optical Circulator for Fiber Amplifier High Power Optical Circulator GEZHI high power optical circulator is designed for high power applications. It features small size, bandwidth, stable performance, wide temperaturerange,high isolation, low loss, low standing wave,high The characteristics of intermodulation and high power Features & Applications of High Power more
Brand Name:GEZHI or OEM
Model Number:High Power Optical Circulator
Place of Origin:China
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... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ... more
Brand Name:ON Semiconductor
Model Number:NTHD3100CT1G
Place of Origin:USA
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... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ... more
Brand Name:ON Semiconductor
Model Number:NTHD3100CT1G
Place of Origin:USA
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...advantages of the high power battery charger is its high charging speed. With a charging current of up to 30 amps, this charger can quickly and efficiently charge large batteries in a short amount of time. Another advantage of the high power battery ...
...advantages of the high power battery charger is its high charging speed. With a charging current of up to 30 amps, this charger can quickly and efficiently charge large batteries in a short amount of time. Another advantage of the high power battery ... more
Brand Name:YEWY
Model Number:UY2500
Place of Origin:GUANG ZHOU,CHINA
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... The light transmittance of our lens is 92%. (2)High quality PC material We use high quality PC materials,and we also can specify the materials. (3)Convenient installation Screw installation, convenient and fast. (4)Waterproof Fitted with silicone gasket,
... The light transmittance of our lens is 92%. (2)High quality PC material We use high quality PC materials,and we also can specify the materials. (3)Convenient installation Screw installation, convenient and fast. (4)Waterproof Fitted with silicone gasket, more
Brand Name:Hanhui
Model Number:HH-424-126×1-xx-5050
Place of Origin:China
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... voltage DC operation • Product series and company logo on the front • RoHS compliant - LED lights are characterized by low voltage and high brightness. A 10-20 watt LED light source emits light equivalent to a 30-120 watt incandescent lamp.
... voltage DC operation • Product series and company logo on the front • RoHS compliant - LED lights are characterized by low voltage and high brightness. A 10-20 watt LED light source emits light equivalent to a 30-120 watt incandescent lamp. more
Brand Name:TYF
Model Number:HF4027JP15H
Place of Origin:Shenzhen
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...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power...
...Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light Load Efficiency, Output Discharge, Power... more
Brand Name:Texas Instruments
Model Number:TPS62141RGTR
Place of Origin:N/S
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... power supply and new generation IGBT transistor medium frequency power supply. The followings are the details of thyristor KGPS Induction Furnace with triple voltage. Working principle of medium frequency melting furnace is such a circuit which ...
... power supply and new generation IGBT transistor medium frequency power supply. The followings are the details of thyristor KGPS Induction Furnace with triple voltage. Working principle of medium frequency melting furnace is such a circuit which ... more
Brand Name:huarui
Model Number:to be negotiated
Place of Origin:China
