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50Ω RF Power Amplifier Pulse 100W for B2B Buyers Product Description: This Radio Transmitter Power Amplifier is an advanced, reliable, and cost-effective radio frequency power amplifier, designed to meet the demands of commercial and industrial ...
50Ω RF Power Amplifier Pulse 100W for B2B Buyers Product Description: This Radio Transmitter Power Amplifier is an advanced, reliable, and cost-effective radio frequency power amplifier, designed to meet the demands of commercial and industrial ... more
Model Number:PA960T1215M Pulse 100W-28V
Place of Origin:China
Minimum Order Quantity:2
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Ku Band Power Amplifier 0.1-18 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and ...
Ku Band Power Amplifier 0.1-18 GHz P1dB 20 dBm RF Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and ... more
Brand Name:SWT
Model Number:SW-PA-10018000-20C
Place of Origin:China
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...RF Power Amplifier with 100 Watt RF Power Specification: Item Specification Frequency Range GSM 900MHz~980MHz Customized Gain 50dB Max RF Output Power 48.5dBm-50dBm Input Range ≤10dBm Gain Adjust Range 31dB Gain Adjust Step 1dB In-Band Ripple 2dB Input/Output VSWR Less 1.5 Working Voltage 27VDC Working Current 75W 8A 100W 9.1A RF...
...RF Power Amplifier with 100 Watt RF Power Specification: Item Specification Frequency Range GSM 900MHz~980MHz Customized Gain 50dB Max RF Output Power 48.5dBm-50dBm Input Range ≤10dBm Gain Adjust Range 31dB Gain Adjust Step 1dB In-Band Ripple 2dB Input/Output VSWR Less 1.5 Working Voltage 27VDC Working Current 75W 8A 100W 9.1A RF... more
Brand Name:Kimpok Technology / OEM
Model Number:KP-LAM900-100W
Place of Origin:China
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...RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment range 31dB Gain adjustment step 1.0dB Numerical adjustment error 0～20dB ≤1.0 20～30dB ≤1.5 Fluctuation band ≤1.0dB(Peak to peak value) Automatic level control ALC YES Input Voltage Standing Wave Ratio ≤1.35 Output Voltage...
...RF power amplifier Radio frequency index: Frequency 550MHz Bandwidth range 30MHz Max output power 43±1.0dBm ALC control range ≥20dB Band group delay ≤50ns Gain 50±1.0dB Gain adjustment range 31dB Gain adjustment step 1.0dB Numerical adjustment error 0～20dB ≤1.0 20～30dB ≤1.5 Fluctuation band ≤1.0dB(Peak to peak value) Automatic level control ALC YES Input Voltage Standing Wave Ratio ≤1.35 Output Voltage... more
Brand Name:HuaNuo
Model Number:HN-PA20W_550
Place of Origin:China
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RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF...
RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF... more
Brand Name:VBE
Place of Origin:CHINA
Certification:ISO 9001
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... • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops • High supply voltage ripple rejection • Protected against electrostatic discharge • Outputs short-circuit safe to ground, VCC and
... • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops • High supply voltage ripple rejection • Protected against electrostatic discharge • Outputs short-circuit safe to ground, VCC and more
Brand Name:TI
Model Number:TDA8541T
Place of Origin:Original
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High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-...
High Power Linear RF Power Amplifier 25 Watt Support 868Mhz / 915Mhz Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28V,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA-... more
Brand Name:Ding Shen
Model Number:DS-LAM800-25W
Place of Origin:China
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... power, good in band flatness, and VSWR protection. Signal bandwidth: 300-400MHz Output power: 50dBm(100W) Operating Voltage: 28V Power flatness: < 1dB Company Information Suzhou Industrial Park. Founded in 2010. The only official shop!
... power, good in band flatness, and VSWR protection. Signal bandwidth: 300-400MHz Output power: 50dBm(100W) Operating Voltage: 28V Power flatness: < 1dB Company Information Suzhou Industrial Park. Founded in 2010. The only official shop! more
Brand Name:SZHUAHI
Model Number:YPM030442100C
Place of Origin:Jiangsu, China
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... Passband Fluctuation ≤1dB (Peak to peak value) Input level(dB) -7dB Shoulder ratio(dBc) ≤-30dBc Operating voltage +11V～+18V Vdc Working current ≤1.8A_12V Working temperature -20～+70℃
... Passband Fluctuation ≤1dB (Peak to peak value) Input level(dB) -7dB Shoulder ratio(dBc) ≤-30dBc Operating voltage +11V～+18V Vdc Working current ≤1.8A_12V Working temperature -20～+70℃ more
Brand Name:Huanuo
Model Number:HN-720FDDAMP
Place of Origin:China
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RF Power Amplifier MMIC For 3200 To 3800MHz New Radio 5G Wireless Application The YP352833 from TXtelsig is a high integrated power amplifier MMIC intend, that operates from 3.2 to 3.8 GHz ideal for a wider range of 5G wireless communication such as ...
RF Power Amplifier MMIC For 3200 To 3800MHz New Radio 5G Wireless Application The YP352833 from TXtelsig is a high integrated power amplifier MMIC intend, that operates from 3.2 to 3.8 GHz ideal for a wider range of 5G wireless communication such as ... more
Brand Name:TX TELSIG
Model Number:YP352833
Place of Origin:China
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2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ...
2W COFDM RF Power Amplifier for Long Range Drone UAV Video Link 12-18VDC Introduction The PA700MHz-2W is a 2 watts COFDM power amplifier specially designed for UAV video transmission, it features small size and light weight, and supports 690-710MHz ... more
Brand Name:OEM
Model Number:PA700MHz-2W
Place of Origin:China
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PA50-1000MHz 250W RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA50-1000MHz 250W RF Power Amplifier is engineered for professional signal amplification, combining high performance with robust ...
PA50-1000MHz 250W RF Power Amplifier – High-Integration Device for EMC Testing & Signal Amplification Product Description This PA50-1000MHz 250W RF Power Amplifier is engineered for professional signal amplification, combining high performance with robust ... more
Brand Name:NENGXUN
Model Number:NX-PA50-1000
Place of Origin:China
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... • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops • High supply voltage ripple rejection • Protected against electrostatic discharge • Outputs short-circuit safe to ground, VCC and
... • Standby mode controlled by CMOS compatible levels • Low standby current • No switch-on/switch-off plops • High supply voltage ripple rejection • Protected against electrostatic discharge • Outputs short-circuit safe to ground, VCC and more
Brand Name:TI
Model Number:TDA8541T
Place of Origin:Original
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...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF
...RF Power Amplifier Module 80x50x16mm for LTE/NR Frequency Product Description: The latest Power Amplifier Module from our company has superior performance, offering 40dBm of gain (depending on different models), a working current of ≤0.8A, an input/output VSWR of ≤1.5, and a passband ripple of ≤2.0dB. Its compact size of 80x50x16mm makes it ideal for space-constrained applications. This digital power amplifier module is designed for RF more
Brand Name:EST
Model Number:LTE20W-B1
Place of Origin:CHINA
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... dB Output Current per Channel: 50 mA Ib - Input Bias Current: 70 pA Vos - Input Offset Voltage: 1 uV en - Input Voltage Noise Density: 55 nV/sqrt Hz Supply Voltage - Max: 5.5 V Supply Voltage - Min: 2
... dB Output Current per Channel: 50 mA Ib - Input Bias Current: 70 pA Vos - Input Offset Voltage: 1 uV en - Input Voltage Noise Density: 55 nV/sqrt Hz Supply Voltage - Max: 5.5 V Supply Voltage - Min: 2 more
Brand Name:TI
Model Number:OPA335AIDBVR
Place of Origin:original
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...-820MHz((other frequency support customization) Output Power 30W Frequency and Power Customization Support Max Gain 45 dBm Voltage 24-32V Product Size 29.7*131*15.5mm Product Weight 136 g Lead time Quantity(PCS)
...-820MHz((other frequency support customization) Output Power 30W Frequency and Power Customization Support Max Gain 45 dBm Voltage 24-32V Product Size 29.7*131*15.5mm Product Weight 136 g Lead time Quantity(PCS) more
Brand Name:LDSK
Place of Origin:Guangdong, China
Minimum Order Quantity:1 piece
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...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF...
...RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, operate from a 7.2 volt supply and require 1.0 mW (MHW903 / 953) or 100 mW (MHW954) of RF input power. • Specified 7.2 Volt Characteristics: RF... more
Brand Name:Motorola
Model Number:MHW903
Place of Origin:Freescale Semiconductor
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..., Isolated Case, Non Inductive. Single Screw Mounting to Heat Sink. Molded Case for Protection and Easy to Mount. Applications : RF Power Amplifier, Automated Machine Controller, Voltage Regulation. Switching Power Supplies, UPS,
..., Isolated Case, Non Inductive. Single Screw Mounting to Heat Sink. Molded Case for Protection and Easy to Mount. Applications : RF Power Amplifier, Automated Machine Controller, Voltage Regulation. Switching Power Supplies, UPS, more
Brand Name:JDC
Model Number:PRT
Place of Origin:CHINA
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...RF Power Amplifiers RF IC is an integrated circuit that is designed to transmit and receive radio frequency signals. It typically includes a range of components, such as amplifiers, mixers, and filters. RF ICs common features include: - Frequency range: This refers to the range of frequencies that the RF IC can transmit and receive. It is important to choose an RF...
...RF Power Amplifiers RF IC is an integrated circuit that is designed to transmit and receive radio frequency signals. It typically includes a range of components, such as amplifiers, mixers, and filters. RF ICs common features include: - Frequency range: This refers to the range of frequencies that the RF IC can transmit and receive. It is important to choose an RF... more
Brand Name:Mini-Circuits
Model Number:GVA-62+
Minimum Order Quantity:1PCS
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... more
Brand Name:Mitsubishi Electric Semiconductor
Model Number:2SC1971
Place of Origin:CHINA
