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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100% more
Brand Name:Hua Xuan Yang
Model Number:3403D-U-V
Place of Origin:ShenZhen China
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ more
Brand Name:Hua Xuan Yang
Model Number:G170C03LR1S
Place of Origin:ShenZhen China
Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High forward transfer ...
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer 2SK3797 Field Effect Transistor Silicon N-Channel MOS Type Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.) • High forward transfer ... more
Brand Name:ANTERWELL
Model Number:2SK3797
Place of Origin:Malaysia
IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
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... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to
... Body Model: > 4000 V− Machine Model: > 400 V 3. Moisture Sensitivity Level: 1 4. MOS (Field Effect Transistor) / LP3407LT1G Diodes and Rectifiers P channel 30V 4.1A Customer Service: 1. Do you support BOM lists? Of course, we have a professional team to more
Brand Name:Original
Model Number:LP3407LT1G
Minimum Order Quantity:discussible
SMD MOS Field Effect Transistor SOT-23 LP3407LT1G RoHS
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Integrated Circuits IC Original and New,CJ2304 SOT-23 N-channel MOS Field Effect Transistor CJ/Changdian Original [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including ...
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FDB2614 TO-263 MOS Field Effect Transistor Brand New And Original Integrated Circuit Chip PRODUCT DESCRIPTION Part number FDB2614 is manufactured by FAIRCHILD and distributed by Stjk. As one of the leading distributors of electronic products, we carry man...
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High power NPN epitaxial planar transistor 2SD669A Product Description Model Number 2SD669A Package TO-3P Date Code 18+ Packing Tape and reel/ Tube Stock Enough Stock Supplier Quanyuantong Electronics Co.,ltd Lead time 48hours Quality Warranty 360 days ...
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2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, ...
2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L) • These Devices are Pb−Free, ... more
Brand Name:TI
Model Number:2N7002LT1G
Minimum Order Quantity:Contact us
2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor
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AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will...
AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube Specification Shipping: 1, We can shipping all over the world by DHL, UPS, FEdex, TNT and EMS. The packaging is very safe and strong. Please nitfy me you have any special needs 2, It will... more
Brand Name:SAIKELI
Model Number:AO4486
Place of Origin:China
AO4486 SOP-8 N P channel field effect transistor (MOSFET) MOS tube
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...Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS...
...Field Effect Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS... more
Brand Name:TOSHIBA
Model Number:TK13A60D
Place of Origin:Original
TK13A60D TOSHIBA Field Effect Transistor
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... 1. product model:AO3402 2. Product features:Switching power supply protection 3. wrap:SOT23-3 4. FET type: Single N-Channel MOS 5
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... building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. CMOS CMOS (complementary MOS) was invented by Chih-Tang Sah and Frank Wanlass at
... building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. CMOS CMOS (complementary MOS) was invented by Chih-Tang Sah and Frank Wanlass at more
Brand Name:Upperbond
Model Number:Maker
Place of Origin:China
Baby Mark King Size Field Effect Transistor Cigarette Machine Parts
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800V CoolMOSª P7 Power Transistor IPA80R1K4P7 MOS tube Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD ...
800V CoolMOSª P7 Power Transistor IPA80R1K4P7 MOS tube Features • Best-in-class FOM RDS(on) * Eoss; reduced Qg, Ciss, and Coss • Best-in-class DPAK RDS(on) • Best-in-class V(GS)th of 3V and smallest V(GS)th variation of ±0.5V • Integrated Zener Diode ESD ... more
Brand Name:Julun
Model Number:PG-TO 220FP
Place of Origin:CHINA
800V CoolMOS P7 Power Transistor IPA80R1K4P7 MOS tube Field effect transistor
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...transistor is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation.Pingshang Technology's main SMD transistor series,The main categories are:SMD diodes, SMD transistor, field effect tubes and MOS tubes. Free samples, provided for life! The field effect...
...transistor is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage stabilization, and signal modulation.Pingshang Technology's main SMD transistor series,The main categories are:SMD diodes, SMD transistor, field effect tubes and MOS tubes. Free samples, provided for life! The field effect... more
Country/Region:china
P-type N-type field effect tube MOS tube Multiple models Brand supplier Pingshang Technology
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reasonable price field-effect tubeBRCS4606SCelectronic parts and componentsSOP8 Product Description BRCS4606SC Category Transistors/MOSFET RoHS RoHS Package SOP-8 Manufacturer Foshan Blue Rocket Elec Brand Category Authorized Brands Packaging Tape & Reel (...
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SVF840F SILAN 8A 500V high voltage MOS tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistor It is manufactured using Silan Microelectronics' F-Cell TM planar high voltage VDMOS process technology. ...
SVF840F SILAN 8A 500V high voltage MOS tube Description: SVF840F/D/S/MJ N-channel enhancement mode high voltage power MOS field effect transistor It is manufactured using Silan Microelectronics' F-Cell TM planar high voltage VDMOS process technology. ... more
Brand Name:SILAN
Model Number:SVF840F
Place of Origin:CHINA
SILAN SVF840F 8A 500V High Voltage MOS Tube
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... package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This
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..., is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor), and has high input of MOSFET Both the impedance and the low turn-on voltage drop of the GTR.