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... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word,
... memory. It is internally configured as an 16-bank (4-banks per Bank Group) DRAM. Specification Of MT53E512M32D1ZW-046 WT:B Part Number: MT53E512M32D1ZW-046 WT:B Memory Format: DRAM Memory Size: 16Gbit Memory Interface: Parallel Write Cycle Time - Word, more
Brand Name:Original Factory
Model Number:MT53E512M32D1ZW-046 WT:B
Place of Origin:CN
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...Memory Storage capacity: 32 Mbit Organization: 4M x 8 Access time: 12 ns Interface Type: Parallel Supply Voltage - Max: 3.3 V Supply voltage - Min: 3 V Supply Current—Maximum: ...
...Memory Storage capacity: 32 Mbit Organization: 4M x 8 Access time: 12 ns Interface Type: Parallel Supply Voltage - Max: 3.3 V Supply voltage - Min: 3 V Supply Current—Maximum: ... more
Brand Name:Infineon Technologies
Model Number:CY7C1079DV33-12BAXI
Place of Origin:Germany
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AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ...
AS4C32M16SC-7TIN Dynamic Random Access Memory C8051F350-GQ AD7276BRMZ Memory Data Storage Features •Fast clock rate: 133 MHz • Programmable Mode registers - CAS Latency: 1 or 2 or 3 - BurstLength:1,2,4,8,or fullpage - ... more
Brand Name:Original
Model Number:AS4C32M16SC-7TIN
Place of Origin:Original
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Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspection System for Packaged Goods & Unpackaged ...
Fully Automatic AC220V Food X Ray Machines Ferromagnetic Random Access Memory Hot Sale Ferromagnetic Random Access Memory Food X-Ray Inspection And Detection Machine X-ray Sundries Screening Machine X-ray Inspection System for Packaged Goods & Unpackaged ... more
Brand Name:Easyweigh
Model Number:FXR-4017K100
Place of Origin:China
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... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR...
... NMO Four generations of low power double data rate synchronous dynamic random access memory Product Usage LPDDR is arguably the most widely used "working memory" memory for mobile devices worldwide. Low Power Double Data Rate SDRAM, a type of DDR... more
Brand Name:SKHYNIX
Model Number:H9HCNNNBPUMLHR- NMO
Place of Origin:KOREA
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...Random Access Memory . Part NO: MCM6246WJ20 Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communications among the CPU, in some cases RAM, and PCI Express (or AGP) video cards, and the Sourthbridge. Some Northbridges also contain integrated video controllers, also known as a Graphics and Memory
...Random Access Memory . Part NO: MCM6246WJ20 Brand: MOTOROLA Mounting Type: Surface Mount Date Code: 03+ Quality Warranty: 3 Months Application: COMPUTER Over View The Northbridge typically handles communications among the CPU, in some cases RAM, and PCI Express (or AGP) video cards, and the Sourthbridge. Some Northbridges also contain integrated video controllers, also known as a Graphics and Memory more
Brand Name:MOTOROLA
Model Number:MCM6246WJ20
Place of Origin:Malaysia
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MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products...
MT53D512M32D2DS-053 AIT:D IC Electronic Components Dynamic random access memory Product description Part number MT53D512M32D2DS-053 AIT:D is manufactured by MICRON Company and distributed by AYE. As one of the leading distributors of electronic products... more
Brand Name:MICRON
Model Number:MT53D512M32D2DS-053 AIT:D
Place of Origin:Shenzhen,China
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#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px... more
Brand Name:original
Model Number:W9825G6KH-6
Place of Origin:original
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#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root ....
#detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .... more
Brand Name:Original
Model Number:CY62256LL-70SNC
Place of Origin:Guangdong, China
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RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan. Mainly engaged in the ...
RAM DDR4 4G 8G 16G 32G ECC 2133 2400 2666 Mhz Random Access Server Memory Certifications Beijing Guangtian Runze Technology Co., Ltd. was established in March 2012, with a registered capital of 20 million yuan. Mainly engaged in the ... more
Model Number:32G 16G 8G
Place of Origin:China
Packaging Details:box
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...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access...
...Random Access Memory (SRAM) device organized as 262,144 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (tAA, tRC, tWC) of 10/12/15/20 ns with output enable access... more
Brand Name:Alliance Memory, Inc.
Model Number:AS7C34098A-10JIN
Minimum Order Quantity:1
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... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7
... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7 more
Model Number:M29W640FB
Place of Origin:original factory
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... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ...
... random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, ... more
Brand Name:CYPRESS
Model Number:FM24CL04B
Place of Origin:Original Factory
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... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ...
... (DDR) synchronous dynamic random access memory (SDRAM) device. It is a 16 Meg x 16 bit memory device organized as 8 banks of 16 Meg x 8 bits. It is designed to operate on a 5.0V supply and is fabricated using the fast and low power ... more
Brand Name:Micron Technology Inc.
Model Number:MT46V16M16P-5B:M
Place of Origin:original
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...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ...
...flash memory chips. Hynix is the world's second-largest memory chipmaker and the world's 3rd-largest semiconductor company. Founded as Hyundai Electronic Industrial Co., Ltd. in 1983 and known as Hyundai Electronics, the company has manufacturing ... more
Brand Name:Hynix
Model Number:Hynix Memory IC
Place of Origin:South Korea, China
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... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ...
... - 64KB BYTEWIDE FRAM MEMORY Quick Detail: 64Kb Bytewide FRAM Memory Description: The FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in ... more
Brand Name:original
Model Number:FM1608-120
Place of Origin:Original Factory
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... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7
... Program (optional) • Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns • Programming Time – 10 µs per Byte/Word typical – 4 Words/8 Bytes Program • 135 memory blocks – 1 Boot Block and 7 more
Brand Name:Anterwell
Model Number:M29W640FB
Place of Origin:original factory
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...GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion...
...GTR 64Kb I2C F-RAM with 100 Trillion Write Cycles 150ns Access Time 1MHz Speed 2.7-3.6V Operation Industrial Temp & 8-lead TSSOP Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K × 8 ❐ High-endurance 100 trillion... more
Brand Name:Infineon
Model Number:FM24CL64B-GTR
Place of Origin:China
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...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories...
...memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories... more
Brand Name:Original
Model Number:FM24W256-G
Place of Origin:US
