| Categories | LED Light Chip |
|---|---|
| Brand Name: | PHOENIX |
| Model Number: | CERAMIC3030 |
| Certification: | ANSI/ESDA/JEDEC JS-001 |
| Place of Origin: | SUZHOU |
| MOQ: | 5000PCS |
| Price: | Negotiation |
| Payment Terms: | Western Union, MoneyGram, T/T |
| Supply Ability: | 4000K PER MONTH |
| Delivery Time: | 7-10 DAYS |
| Packaging Details: | 4000PCS /ROLL |
| Name: | SMD LED CERAMIC3030 RED |
| λd: | 720-740nm |
| Power: | 0.67W |
| nput Voltage(V): | 2v |
| Luminous Flux(lm): | 0.4-0.6lm |
| Warranty(Year): | 2 years |
| Working Time (hours): | 20000 |
| Operating Temperature(℃): | -40-85 |
2V 350MA 1.5W CERAMIC3030 0.4-0.6LM 720-740NM SMD LED CHIP FOR PLANT LIGHTING
Characteristic
Maximum Ratings
Parameter Symbol Values
| Operating Temperature | Top | min. max. | -40 °C 125 °C |
| Storage Temperature | Tstg | min. max. | -40 °C 125 °C |
| Junction Temperature | T | max. | 135 °C |
| Forward current | I | min. max. | 100 mA 500 mA |
Surge Current t ≤ 10 µs; D = 0.005 ; TJ = 25 °C | FS | max. | 700 mA |
| Reverse voltage 2) | V | Not designed for reverse operation | |
ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 3B) | ESD | 8 kV |
Characteristics
I = 700 mA; TJ = 25 °C
Parameter Symbol Values
| Peak Wavelength | λpeak typ. 730 nm |
Centroid Wavelength 3) I = 350 mA | λcentroid min. 710 nm typ. 727 nm max. 740 nm |
Dominant Wavelength 3) I = 350 mA | λdom typ. 35 nm |
| Spectral Bandwidth at rel,max | ∆λ typ. 20 nm |
| Viewing angle at 50% IV | 2φ typ. 140 ° |
Forward Voltage 4) I = 350 mA | 1.8V 2.00V 2.30V |
| Reverse current 2) | Not designed for reverse operation |
| Electrical thermal resistance junction/solderpoint with efficiency ηe = 74 % | RthJS elec. typ. 1.3 K / W |
Forward Voltage Groups
Group Forward Voltage 4)
I = 350 mA
| 1.80 V | 1.90 V |
| 1.90 V | 2.00 V |
| 2.00 V | 2.10 V |
| 2.10 V | 2.20 V |
Centroid
Group
Centroid Wavelength 3)
I = 350 mA
λcentroid
| 710NM | 740NM |
Relative Spectral Emission
Irel = f (λ); IF = 350 mA; TJ = 25 °C

Radiation Characteristics
Irel = f (ϕ); TJ = 25 °C



Dimensional Drawing

Further Information:
Approximate Weight: 28.0 mg
Package marking: Anode
Corrosion test:Class: 3BTest condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)
ESD advice: The device is protected by ESD device which is connected in parallel to the Chip.
Reflow Soldering Profile
Product complies to MSL Level 2 acc. to JEDEC J-STD-020E

Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit
Minimum Recommendation Maximum
Ramp-up rate to preheat*) 2 25 °C to 150 °C | 3 | K/s |
tS 60 100 T to T | 120 | s |
Ramp-up rate to peak*) T to T 2 | 3 | K/s |
| Liquidus temperature TL 217 | °C | |
| Time above liquidus temperature tL 80 | 100 | s |
| Peak temperature T 245 | 260 | °C |
Time within 5 °C of the specified peak 10 20 temperature TP - 5 K | 30 | s |
Ramp-down rate* 3 T to 100 °C | 6 | K/s |
Time 25 °C to TP | 480 | s |
All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range
|
Quality 60mA Forward Current LED Light Chip in Cct 2700K 3000K 6000K for SMD Applications wholesale
Quality 5.0mm X 5.0mm High Power LED Chip -40°C To 85°C for Industrial and Commercial Lighting Needs wholesale
Quality Upgrade Your Outdoor Lighting with Wavelength 450-460nm LED Light Chip and 3.0-3.4V Forward Voltage wholesale