| Categories | LaAlO3 Wafer |
|---|---|
| Brand Name: | Crystro |
| Model Number: | CR210122-3 |
| Certification: | SGS |
| Place of Origin: | China |
| MOQ: | 1pc |
| Price: | Negotiable |
| Payment Terms: | T/T, Western Union, MoneyGram, Paypal |
| Supply Ability: | 1000pcs/month |
| Delivery Time: | 3-4 weeks |
| Packaging Details: | 1000 clean room, 100 clean bag or single box packaging |
| Material: | 3inch diameter Laalo3 wafer |
| Size: | 3inchx0.5mm，3inchx0.6mm |
| Melt point(℃): | 2080 ℃ |
| Surface finish: | < 10A |
| Orientation: | <100>,<111> |
| Redirection precision: | ±0.2° |
| Density: | 6.52(g/cm3) |
| Type: | Flats |
3inch diameter Laalo3 wafer
Lanthanum aluminate (LaAlO3) substrate single crystal is the most
important industrialized, large-size high-temperature
superconducting thin film single crystal substrate material. It is
grown by Czochralski method, we can get two inches in diameter and
larger single crystals and the substrate. It works with
high-temperature superconducting materials lattice well matched,
such as YBaCuO. Lower dielectric constant, low loss microwave, and
thus suitable for production of high-temperature superconducting
microwave electronic devices (such as high-temperature
superconducting microwave filters in the remote communications.).
Has great practical and potential applications.
Applications:
Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials
| Major Parameters | ||
| Crystal structure | M6(normal temperature) | M3(>435℃) |
| Unit cell constant | M6 a=5.357A c=13.22 A | M3 a=3.821 A |
| Melt point(℃) | 2080 ℃ | |
| Density | 6.52(g/cm3) | |
| Hardness | 6-6.5(mohs) | |
| Thermal expansion | 9.4x10-6/℃ | |
| Dielectric constants | ε=21 | |
| Secant loss(10ghz) | ～3×10-4@300k,～0.6×10-4@77k | |
| Color and appearance | To anneal and conditions differ from brown to brownish | |
| Chemical stability | Insoluble in mineral acid at room temperature,soluble inH3PO4 at temperatures above 150 °C | |
| Characteristics | For microwave electron device | |
| Growth method | Czochralski method | |
| Size | Size upon request, the biggest diameter 3 inches | |
| Ф15, Ф20, Ф1″, Ф2″, Ф2.6″, Ф3″ | ||
| Thickness | 0.5mm,1.0mm | |
| Polishing | Single or double | |
| Crystal Orientation | ＜100＞ ＜110＞ ＜111＞ | |
| redirection precision | ±0.5° | |
| Redirection the edge: | 2°(special in 1°) | |
| Angle of crystalline | Special size and orientation are available upon request | |
| Ra: | ≤5Å(5µm×5µm) | |
| Pack | 1000 clean room, 100 clean bag or single box packaging | |
Main Advantages:
Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability
|
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