PIMN31,115 NPN / PNP Resistor Equipped Transistor 500 MA 50V Dual Gate Transistor

Categories	Electronic Components
Model Number:	PIMN31
Place of Origin:	Malaysia
MOQ:	3000 PCS
Price:	Negotiation
Payment Terms:	T/T, Western Union ， ESCROW
Supply Ability:	30000PCS
Delivery Time:	STOCK
Packaging Details:	3000PCS/REEL
Description:	Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 500mA 420mW Surface Mount 6-TSOP
Categories:	Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	1 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	500nA

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HGTG11N120CND NPT Series N Channel IGBT Anti-Parallel Hyperfast Diode 43A 1200V

Description :

The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design.

This is a new member of the MOS gated high voltage switching IGBT family.

IGBTs combine the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.

The IGBT used is the development type TA49291.

The Diode used is the development type TA49189.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies

where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids,

relays and contactors. Formerly Developmental Type TA49303.

Features :

• 43A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time. . . . . .340ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

• Thermal Impedance SPICE Model

Product Tags:

resistor equipped transistor

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