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IPP026N10NF2SAKMA1

Categories	Single FETs, MOSFETs
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.8V @ 169µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	154 nC @ 10 V
Rds On (Max) @ Id, Vgs:	2.6mOhm @ 100A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Package:	Tube
Drain to Source Voltage (Vdss):	100 V
Vgs (Max):	±20V
Product Status:	Active
Input Capacitance (Ciss) (Max) @ Vds:	7300 pF @ 50 V
Mounting Type:	Through Hole
Series:	StrongIRFET™ 2
Supplier Device Package:	PG-TO220-3
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	27A (Ta), 184A (Tc)
Power Dissipation (Max):	3.8W (Ta), 250W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IPP026N
Description:	TRENCH >=100V

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N-Channel 100 V 27A (Ta), 184A (Tc) 3.8W (Ta), 250W (Tc) Through Hole PG-TO220-3

Product Tags:

ISP1181ADGG

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