Coating 10 μM Nickel For Molybdenum Copper Alloy Based Plate For Igbt Semiconductor
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plated nickel 2~10 μm coating molybdenum copper alloy based plate for igbt semiconductor 1. Information Of Plated Nickel coating MoCu based plate: Nickel-plated molybdenum-copper substrate is a metal material that uses a molybdenum-copper substrate as a ......
Shaanxi Peakrise Metal Co.,Ltd
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Coating 10 μM Nickel For Molybdenum Copper Alloy Based Plate For Igbt Semiconductor
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plated nickel 2~10 μm coating molybdenum copper alloy based plate for igbt semiconductor 1. Information Of Plated Nickel coating MoCu based plate: Nickel-plated molybdenum-copper substrate is a metal material that uses a molybdenum-copper substrate as a ......
Shaanxi Peakrise Metal Co.,Ltd
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APT25GT120BRG Discrete Semiconductors TO-247-3 IGBT Transistors
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Discrete Semiconductors APT25GT120BRG TO-247-3 IGBT Transistors Product Description: The Thunderblot IGBT® is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ......
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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IXYS IXGH24 High Voltage IGBT Discrete Semiconductors IXGH24N170
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...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT......
Angel Technology Electronics Co
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IGBT Discrete Semiconductor Devices IXGH24N170 IXYS IXGH24 High Voltage
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...IGBT IXGH24 IGBT 1700V 50A 250W TO247AD Discrete Semiconductor Products Specification:High Voltage IGBT NPT 1700 V 50 A 250 W Through Hole TO-247AD Part number IXGH24N170 Category Discrete Semiconductor Products Transistors - IGBTs - Single Mfr IXYS Series - Package Tube Part Status Active IGBT......
Guangzhou Topfast Technology Co., Ltd.
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CM400DY-12H High Power IGBT Module Original Power For Electronic Componets
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...IGBT Module Original Power Igbt Module CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor Mitsubishi Electric Semiconductor QM7E2Y-H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor CM1000HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor CM10DU-12H HIGH POWER SWITCHING USE INSULATED TYPE Mitsubishi Electric Semiconductor......
Guangzhou Sande Electric Co.,Ltd.
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GD200FFY120C6S TRANSISTOR IGBT MODULE 1.2KV 309A SEMICONDUCTOR
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... IGBT MODULE 1.2KV 309A SEMICONDUCTOR Manufacturer: StarPower Europe AG Product Category: IGBT MODULE RoHS: Details Type: IGBT MODULE Brand: StarPower Operating Supply Voltage: 1.2 V Packaging: Standard Subcategory: IGBT MODULE Description STARPOWER IGBT ......
Wisdtech Technology Co.,Limited
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650V IGBT Power Semiconductor With High Input Impedance In TO-247 Package
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...IGBT Power Semiconductor with High Input Impedance in TO-247 Package Product Description: The Inverter IGBT has a Collector-Emitter Voltage ranging from 650V to 1200V, making it an ideal choice for high voltage applications. It features an IGBT device type that allows for excellent current sharing in parallel operation, resulting in consistent performance. With a switching frequency of 20KHz to 60KHz, the Inverter IGBT......
Guangdong Lingxun Microelectronics Co., Ltd
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Automotive IGBT Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules
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...IGBT Modules FP25R12KT4B11BPSA1 Discrete Semiconductor IGBT Modules Product Description Of FP25R12KT4B11BPSA1 FP25R12KT4B11BPSA1 is EconoPIM™2 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diodeund PressFIT/NTC. Specification Of FP25R12KT4B11BPSA1 Part Number: FP25R12KT4B11BPSA1 Rated Resistance: 5 KΩ Deviation Of R100: -5-5 % Power Dissipation: 20 MW B-Value: 3375 K Symbol Size: 16x16 Features Of Automotive IGBT......
ShenZhen Mingjiada Electronics Co.,Ltd.
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WG50N65DHWQ IGBT Transistor Module , Field Stop Trench IGBT 650V 91A 278W
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...IGBT Trench Field Stop 650 V 91 A 278 W Through Hole TO-247-3 WeEn Semiconductors WG50N65DHWQ IGBT WeEn Semiconductors WG50N65DHWQ IGBT is a high-speed 650V/50A IGBT with an anti-parallel diode in a TO247 package. This IGBT offers high-speed with low switching losses and features smooth switching behavior that avoids voltage overshoot and reduces system EMI. The WG50N65DHWQ IGBT......
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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