Multifunctional Low Threshold Voltage Mosfet TO-252 Fast Charging
|
*, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, svg {display: block;max-width: 100%;}input, button, textarea, select {font: ......
Guangdong Lingxun Microelectronics Co., Ltd
|
Durable Trench Low Voltage Power MOSFET , SGT Ultra Low Threshold Voltage MOSFET
|
Low Voltage Power MOSFET with Trench/SGT Structure Process and Smaller RSP *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, ......
Reasunos Semiconductor Technology Co., Ltd.
|
IXTQ130N10T MOSFET High Power Low On Resistance and Low Gate Threshold Voltage for Optimal Performance
|
...: TO-247 Product Description: The IXYS IXTQ130N10T is an N-channel MOSFET with a max drain source voltage of 100V and a max drain current of 130A. This device offers a low RDS(on) of 0.01 Ohm and is housed in a TO-247 package. It is designed for use in...
Shenzhen Sai Collie Technology Co., Ltd.
|
SPW47N60C MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 NP Channel Mosfet
|
...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.1 V Qg - Gate Charge: 252......
Wisdtech Technology Co.,Limited
|
IPD100N04S402ATMA1 Integrated Power Ic TO-252
|
...MOSFET transistor commonly used in fields such as DC power switches, motor control, lighting control, and electronic transformers. Conclusion: IPD100N04S402ATMA1 has the characteristics of low conduction resistance, high switching speed, low threshold voltage, and high temperature working ability, which can improve system efficiency and reliability. Parameters: Drain Source Voltage......
HK LIANYIXIN INDUSTRIAL CO., LIMITED
|
AP30N10D High Current Transistor , 30A 100V TO-252 Field Effect Transistor
|
...252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: Depletion Mode: Normally ON. Applying the VGS would turn it OFF. Enhancement Mode: Normally OFF. Applying the VGS would turn it ON. N-channel MOSFETs: positive voltages and currents. P-channel MOSFETs: negative voltages and currents. Low voltage MOSFETs: BVDSS from 0 V to 200 V. High voltage...
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
40V 90A Mosfet INFINEON Chip IPD90N04S4-04 N Channel TO252-3
|
...MOSFET N-CH 40V 90A TO252-3 Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 90 A Rds On - Drain-Source Resistance: 4.1 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage......
HK INTERRA TECHNOLOGY LIMITED
|
BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23
|
... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND...
Anterwell Technology Ltd.
|
BSS138LT1G Onsemi Mosfet Trans N CH 50V 0.2A 3 Pin SOT-23 T/R
|
...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low...
Sunbeam Electronics (Hong Kong) Limited
|
IPD350N06LG Semiconductors Discrete Semiconductors Transistors MOSFET
|
...-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 29 A Rds On - Drain-Source Resistance: 35 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.2 V Qg - Gate Charge: 10 nC Minimum Operating Temperature: -...
Walton Electronics Co., Ltd.
|
Submit your “low threshold voltage mosfet to 252” inquiry in a minute :