BCX56 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ......
Anterwell Technology Ltd.
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80V 1A SOT89 BCX56-10 NPN Medium Power Transistors
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BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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BCX56-16,147 Power Mosfet IC Transistor NPN SILICON PLANAR MEDIUM POWER TRANSISTORS
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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and ......
ChongMing Group (HK) Int'l Co., Ltd
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Thermal Resistance N Channel Mosfet Switch , Medium Power Transistor
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AOD418/AOI418 30V N-Channel MOSFET General Description The AOD418/AOI418 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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NPN Low VCEsat Mosfet Power Transistor PNP Complement PBSS4160T
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...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power......
Shenzhen Koben Electronics Co., Ltd.
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HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
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... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
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NE5520379A-T1 NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET MOTOROLA RF Power Transistors
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NE5520379A-T1 is aNECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET. Part NO: NE5520379A-T1 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: ......
Mega Source Elec.Limited
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Switch Circuit High Voltage Npn Power Transistor TIP42C 100V 6A TO220 Package
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... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitable for audio, power linear and switching ......
Shenzhen ATFU Electronics Technology ltd
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
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...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- channel & P- channel power MOSFET are shown in the below figure. Mosfet Power...
Beijing Silk Road Enterprise Management Services Co.,LTD
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UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The UFD series is designed for applications......
Shenzhen Retechip Electronics Co., Ltd
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