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Mmbt5551lt1g Bipolar Transistors

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mmbt5551lt1g bipolar transistors

from 70 Products

MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors

China MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors on sale
MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED

Address: FLAT/RM D52 3/F WONG KING INDUSTRIAL BUILDING NO 2TAU=I YAU STREET

IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR low power mosfet

China IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR low power mosfet on sale
STOCK List CDP1871ACE 5575 HARRIS 15+ DIP CD4001BCMX 1380 FSC 15+ SOP BD243C 5500 FSC 16+ TO-220 BD241C 5500 FSC 15+ TO-220 CD4027BE 6700 TI 13+ DIP BFQ161 2100 PHI 16+ TO-92 74VHCT00AMTCX 7500 FAIRCHILD 16+ TSSOP-14 MTD2955VT4 7527 ON 16+ SOT-252 ......
Anterwell Technology Ltd.

Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module

China Discrete Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode ABB IGBT Module on sale
...Bipolar Transistor (IGBT) For B2B Buyers Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated gate, designed for use in general purpose applications. This device is designed to provide superior performance in demanding applications where normal voltage is required. The IGBT has the best of both worlds: the fast switching speed of a bipolar junction transistor...
MMR TECHNOLOGY HK LIMITED

Address: Suite 9A, 9/F, Hennessy Plaza, 164-166 Hennessy Road, Wanchai, HK

NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor

China NPN Bipolar Transistor IC Chip 100V 65W 6A TIP41C Single Transistor on sale
...transistor bipolar NPN 100V 65W 6A Bipolar transistor TIP41C Products Description: 1.TIP41C single transistor bipolar, NPN, 100 V, 65 W, 6 A, 75 hFE 2. TIP41C, NPN transistor, 6 A, Vce=100 V, HFE:15, 3-pin to-220 package 3.Trans GP BJT NPN 100V 6A 65000mW 3-Pin(3+Tab) TO-220AB Tube 4.The TIP41C is a base island technology NPN power transistor......
Shenzhen Res Electronics Limited

Address: B615, Niulanqian Building, Minzhi Avenue, Longhua District, Shenzhen City, Guangdong Province, China

IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR low power mosfet

China IRG4BC20KDPBF INSULATED GATE BIPOLAR TRANSISTOR low power mosfet on sale
STOCK List CDP1871ACE 5575 HARRIS 15+ DIP CD4001BCMX 1380 FSC 15+ SOP BD243C 5500 FSC 16+ TO-220 BD241C 5500 FSC 15+ TO-220 CD4027BE 6700 TI 13+ DIP BFQ161 2100 PHI 16+ TO-92 74VHCT00AMTCX 7500 FAIRCHILD 16+ TSSOP-14 MTD2955VT4 7527 ON 16+ SOT-252 ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

BC337-40 Transistor IC Chip NPN Bipolar Transistor General Purpose

China BC337-40 Transistor IC Chip NPN Bipolar Transistor General Purpose on sale
...ough-hole transistors are designed for general-purpose applications, offering reliable and versatile performance. The BC337-40 features a single NPN configuration and comes in a TO-......
Yougou Electronics (Shenzhen) Co., Ltd.

Address: Shenzhen, Futian District, Huaqiang North SEG Plaza, Room 6401 A

2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor

China 2SC5200 BJT NPN Transistor 230V 15A 150W Mosfet Bipolar Transistor on sale
...Transistor 230V 15A 150W Mosfet Bipolar Transistor Power Amplifier Applications • High breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1943 • Suitable for use in 100-W high fidelity audio amplifier’s output stage Applications • power amplification Date Sheet Product Attribute Attribute Value Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package / Case: TO-3P-3 Transistor......
Shenzhen Retechip Electronics Co., Ltd

Address: Room L, 23rd Floor, Building B, Duhui 100, Zhonghang Rd, Futian District, Shenzhen City, Guangdong

JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors

China JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors on sale
JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ......
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

2N3792 Bipolar Transistors BJT 80V 10A 5000mW 3 Pin TO-3 Tray

China 2N3792 Bipolar Transistors BJT 80V 10A 5000mW 3 Pin TO-3 Tray on sale
...Bipolar Transistors BJT Power BJT Trans GP BJT PNP 80V 10A 5000mW 3-Pin(2+Tab) TO-3 Tray Product Category: Bipolar Transistors - BJT RoHS: N Mounting Style: Through Hole Package / Case: TO-3 Product Type: BJTs - Bipolar Transistors Factory Pack Quantity: 1 Subcategory: Transistors......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode

China Ultra Fast IGBT Transistor N Channel , Insulated Gate Bipolar Transistor With Built In Diode on sale
G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

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