4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade
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...SiC epitaxial wafer 4H overview 4inch SiC Epitaxial Wafer 4H-N Diameter 100mm Thickness 350μm Prime Grade As a core material for silicon carbide (SiC) power device manufacturing, the 4-inch SiC epitaxial wafer is based on a 4H-N-type SiC wafer, grown using chemical vapor deposition (CVD) to produce a high-uniformity, low-defect-density single-crystal thin film. Its technical advantages include: · Crystal Structure: (0001) silicon-face...
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Epitaxial Wafer 4H/6H SiC Substrates Custom Thickness Doping
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...RF device manufacturers worldwide. The 4” wafer size strikes an excellent balance between performance, availability, and cost-effectiveness—making it the industry’s mainstream choice for mid-to-high volume production. SiC epitaxial wafers consist of...
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers......
Homray Material Technology
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1500C CVD SIC Epitaxy Growth Furnace for Silicon Carbide Growth in 1000*1000*1500mm Effective Space
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... of the semiconductor epitaxial susceptor and etching ring. Epitaxial base, a high-purity graphite disk, with a circular groove on it to fix the wafer substrate.After placing them in the furnace, a layer of crystal film will grow on the surface of the...
Zhuzhou Ruideer Metallurgy Equipment Manufacturing Co.,Ltd
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4H Semi-Insulating SiC Substrate With Si Face Cmp Polished, Research Grade,4”Size
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...industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N...
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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LED Substrate Grinding Wheels Metal Bonded Abrasives ISO14001
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...epitaxial wafers. They can be used steadily on the Japanese, Korean and Taiwanese grinders with high performance. Workpiece: sapphire epitaxial wafer, SiC substrate epitaxial wafer, Si substrate epitaxial wafer. Material of workpiece: Synthetic sapphire, SiC......
China Abrasives Industry Hainan Corporation
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